c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . SFP3710G SFP3710G SFP3710G SFP3710G rev.a aug.2010 silicon n-channel mosfet features ? 59a,100v,r ds(on) (max 18m ? )@v gs =10v ? ultra-low gate charge(typical 1180nc) ? fast switching capability ? 100%avalanche tested ? maximum junction temperature range(175 ) general description this power mosfet is produced using winsemi's advanced planar stripe,dmos technology. this latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. this devices is specially well suited for switching regulators, switching convertors, motor and relay drivers , and drivers for high power bipolar switching transistor demanding high speed and low gate drive power. absolute maximum ratings symbol parameter value units v dss drain source voltage 100 v i d continuous drain current(@tc=25 ) 59 a continuous drain current(@tc=100 ) 42 a i dm drain current pulsed (note1) 240 a v gs gate to source voltage 20 v e as single pulsed avalanche energy (note2) 170 mj e ar repetitive avalanche energy (note1) 7.4 mj dv/dt peak diode recovery dv /dt (note3) 5.8 v/ ns p d total power dissipation(@tc=25 ) 136 w derating factor above 25 1.3 w/ t j ,t stg junction and storage temperature -55~150 t l maximum lead temperature for soldering purposes 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 0.92 /w r qcs thermal resistance , c ase-to-sink - 0.5 - /w r qja thermal resistance , junction-to -ambient - - 62 .5 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance SFP3710G SFP3710G SFP3710G SFP3710G 2 / 7 electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 20 v,v ds =0v - - 100 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 100 v,v gs =0v - - 20 a drain -source breakdown voltage v (br)dss i d =250 a,v gs =0v 100 - - v break voltage temperature coefficient bv dss / t j i d =1ma, referenced to 25 - 0.1 - v/ gate threshold voltage v gs(th) v ds =10v,i d =250 a 2 - 4 v drain -source on resistance r ds(on) v gs =10v,i d = 35 a - - 18 m ? forward transconductance gfs v ds = 50 v,i d = 35 a - 35 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 2990 - pf reverse transfer capacitance c rss - 160 - output capacitance c oss - 3000 - switching time rise time tr v dd = 28 v, i d = 75 a r g = 6.8 ? (note4,5) - 18 - ns turn-on time ton - 86 - fall time tf - 47 - turn-off time toff - 60 - total gate charge(gate-source plus gate-drain) qg v dd = 80 v , v gs =10v, i d = 35 a (note 4 ,5) - 1180 - nc gate-source charge qgs - 190 - gate-drain("miller") charge qgd - 300 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 59 a pulse drain reverse current i drp - - - 240 a forward voltage(diode) v dsf i s = 35 a,v gs =0v - - 1.5 v reverse recovery time trr i dr = 75 a,v dd = 25 v, di dr / dt =100 a / s - 56 75 ns reverse recovery charge qrr - 106 160 c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 50 h i as = 59 a,v dd = 50 v, r g =25 ? ,starting t j =25 3.i sd 59 a,di/dt 300 a/us,v dd < bv dss ,starting t j =25 4.pulse test:pulse width 300us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance SFP3710G SFP3710G SFP3710G SFP3710G 3 / 7 fig.1 on -state characteristics fig.2 typical output characteistics fig.3 typical capacitance vs drain current fig.4 maximum avalanche energy vs drain current fig.5 on-resistance variation vs junction temperature fig.6 gate charge characteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance SFP3710G SFP3710G SFP3710G SFP3710G 4 / 7 fig.7 maximum safe operation area fig.8 maximum drain current vs case temperature fig.9 transient thermal response curve
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance SFP3710G SFP3710G SFP3710G SFP3710G 5 / 7 fig.10 gate test circuit & waveform fig.11 r esistive switching test circuit & waveform fig.12 uncamped inductive switching test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance SFP3710G SFP3710G SFP3710G SFP3710G 6 / 7 fig.13 peak diode recovery dv/dt test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance SFP3710G SFP3710G SFP3710G SFP3710G 7 / 7 to-220 to-220 to-220 to-220 package package package package dimension dimension dimension dimension unit:mm
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